superlattice structure

英 [ˌs(j)uːpəˈlætɪs ˈstrʌktʃə(r)] 美 [ˌsupərˈlætəs ˈstrʌktʃər]

网络  超晶格结构

化学



双语例句

  1. In order to study the energy band fold in phononic crystal superlattice, the plane wave expansion theory is been used to analyze the band structure of phononic crystal superlattice.
    为了研究声子晶体超晶格的能带折叠现象,利用平面波展开法结合超晶胞方法分析了声子晶体超晶格的能带结构。
  2. Nonlinear Parabolic Potential and Stabilities of Bistable System for Superlattice Quantum Well Bi-stable Mechanical Behaviors of Double-layered Isotropic Shell Structure
    非线性抛物线势与量子阱双稳态系统的稳定性双层壳的双稳态力学特性理论分析和数值模拟
  3. The superlattice was characterized with X ray diffraction, and the TEM and its micro parameters were investigated through Fourier X ray profile analysis. The cross section TEM images indicated that there was columnar structure in the superlattice.
    通过X射线衍射和电镜手段对其进行测试,利用X射线傅氏线形分析法对超晶格的微观参数进行表征,通过TEM对超晶格的截面形貌进行观察,发现其具有柱状生长结构。
  4. Research on One dimensional Superlattice Structure of In_ ( 1-x) Al_xAs/ GaAs by X-ray Diffraction and Raman Scattering
    In(1-x)AlxAs/GaAs一维超点阵结构的X射线衍射和Raman散射研究
  5. Two-Dimensional Electron Gas Materials with AlN/ GaN Superlattice Structure Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
    RF-MBE生长AlN/GaN超晶格结构二维电子气材料
  6. A well-defined superlattice structure was characterized by high-angle X-ray diffraction, and the influence of NiFe buffer layer upon the orientation of crystalline growth was studied.
    利用X射线衍射(XRD)表征了自旋阀多层膜的超晶格结构,研究了NiFe缓冲层对自旋阀生长取向的影响。
  7. Measurement of One-Dimensional MBE GaAs/ AlAs Superlattice Structure Parameters by X-Ray Double Crystal Diffractometry
    MBEGaAs/AlAs一维超晶格结构参数的X射线双晶衍射测量
  8. Measurement of One-Dimensional MBE [ ( Al_xGa_ ( 1-x) As)_1 ( GaAs)_m]_n/ GaAs ( 001) Superlattice Structure Parameters by X-Ray Double Crystal Diffractometry
    MBE[(AIxGa(1-x)As)l(GaAs)m]n/GaAs(001)超晶格结构参数的X射线双晶衍射测量研究
  9. Study of the Donor Property in Superlattice Structure of Graded Changing Energy Gap
    渐变能隙超晶格结构中的施主杂质性质的研究
  10. The Fibonacci superlattice is a type of the superlattices with quasiperiodic potential field. In the quasiperiodic structure the Bloch theorem has become invalid.
    费波那奇(Fibonacci)超晶格是一种具有准周期性结构的超晶格,Bloch定理对此结构不适用。
  11. Si/ SiO 2 superlattice structure was designed and prepared by rf magnetron sputtering technique. The high pure polycrystal Si was taken as sputtering target. SiO 2 film was obtained by using Ar+ O 2 as sputtering atmosphere;
    设计并用磁控溅射方法制备了非晶Si/SiO2超晶格结构,以高纯多晶Si为靶材,当以Ar+O2为溅射气氛时,得到SiO2膜,仅以Ar为气氛时,得到Si膜。
  12. The superlattice structure was optimized according to electron transport theory in heterostructure and the result of 3 ω method.
    根据电子在超晶格中的输运理论及热导率实验的结论对超晶格结构进行优化。
  13. This paper discusses the advantages of superlattice semiconductor materials ( Multiple Quantum Well Structure) in optical switching and optical computing.
    本文讨论了超晶格半导体材料(多层量子阱结构)在光开关和光计算中应用的优越性。
  14. Superlattice structure's X-ray diffraction analyzing and structure parameters's calculating
    超晶格结构X射线衍射分析及其结构参数的计算
  15. Spontaneous emission of an atom near the surface of a superlattice film with periodic or quasi-periodic structure
    周期或准周期超晶格薄膜表面吸附原子的自发辐射性质
  16. A New Electric-mechanical Coupled Study on Superlattice Structure in Semiconductors
    一种新型力电耦合超晶格半导体结构研究
  17. The characteristics of Auger depth profile as a method for superlattice structure analysis, as well as its limitations, are discussed.
    讨论了用俄歇深度剖面分布作超晶格结构分析的特点及其局限性。
  18. Studies on Superlattice Structure of Metallic Multilayer Film
    金属多层膜超晶格结构研究
  19. The two structures of BMT main phase, that is 1:2 ordered hexagonal superlattice and disordered cubic structure reflections, were marked in XRD patterns by crystallography.
    通过晶体学计算,标定出BMT主晶相存在的两种结构,1:2有序六方超晶格结构和无序立方结构。
  20. The Ge_xSi_ ( 1-x)/ Si superlattice with 23 periods was grown by molecular beam epitaxy. The X-ray diffraction pattern was measured using a computer-controlled X-ray diffractometer with Cu K_a radiation. Interference peaks due to the superlattice structure were observed up to the 13th order.
    用分子束外延生长了23周期的GexSi(1-x)/Si超晶格,用计算机控制的衍射仪(CuKα辐射)测量了X射线衍射曲线,共观察到13级超晶格结构的衍射峰。
  21. Calculating of X-ray diffraction kinematical theory on STRAIN-LAYER superlattice structure parameters
    半导体超晶格结构参数的X射线衍射运动学理论的计算
  22. Our results indicate that the quantum dot superlattice structure with spatial ordering is more suitable to be utilized in the infrared photodetector than the structure without spatial ordering.
    结果表明空间有序的量子点超晶格结构比空间无序的量子点超晶格更适宜作红外探测器结构。
  23. The electron diffraction patterns show that the over-stoichiometric Li forms superlattice structure. Residual Ti atoms act as pins in the lattice.
    电子衍射花样表明过量Ti形成了超点阵,Ti在点阵中形成钉扎。
  24. It is indicated that the quality and performance of material can be improved by adjusting the growth process in the superlattice interface, controling interface to adjust the superlattice structure in the dependent variable.
    研究发现,在超晶格生长过程中可以通过调整界面生长工艺,控制界面结构来调节超晶格中的应变量,从而提高材料的质量和性能。
  25. A superlattice structure was proposed in order to limit the vertical oxidation.
    我们提出了超晶格的结构来限制纵向氧化。
  26. HRTEM images show the nanowires having layered superlattice structure with perfect commensurability and and exactly four In/ Zn-O layers between two adjacent In-O layers.
    高分辨透射电镜照片显示该纳米线具有完美公度的超晶格层状结构,每两层In-O层间夹四层In/Zn-O层。
  27. In this thesis, we have investigated the transport and optical properties in LD semiconductor driven by THz radiation, and explored the THz oscillator based on superlattice and resonant tunneling structure ( RTS).
    本论文研究了低维半导体在THz场作用下的子带间输运和光学特性,并探索了基于共振隧穿结和超晶格结构的THz振荡源。
  28. The structure of optical superlattice also changes from one-dimension to two-dimension, from single period to quasi-period, even to more complex structure.
    超晶格结构也从一维推广到二维,从周期结构推广到准周期结构,甚至是复杂的非周期结构,从而使得光学超晶格参与的非线性耦合过程变的更加复杂。
  29. Therefore, this paper focuses on the following works. 1. Metal organic chemical vapor deposition ( MOCVD) growth of Si-doped InGaN/ GaN quantum well superlattice sacrificial layer for the LED structure.
    因此,本文围绕选择性剥离GaN外延做了如下四方面工作:1.金属有机化学气相沉积(MOCVD)生长具有Si掺杂的InGaN/GaN量子阱超晶格牺牲层的全结构的LED。